The new molecular beam epitaxy (MBE) system, which is part of the Centre for Designer Quantum Materials, is a two chamber MBE setup connected to a linear transfer tunnel, allowing for in-situ sample transfer to advanced spectroscopic probes, including Angular Resolved Photoemission (ARPES), x-ray photoelectron spectroscopy (XPS), low energy electron diffraction (LEED) and, via a vacuum suitcase, to low temperature scanning tunneling microscopes (STMs).

The two growth modules allow for expitaxy of disparate compounds, with one growth system focussed on synthesis of transition metal oxides in a reactive oxygen environment. This is achieved through ozone distillation. The second module enables growth of materials with a higher vapour pressure, thus avoiding cross-contamination. This system is optimized for growth of transition metal dichalcogenides. Both allow for growth control by reflection high energy electron diffraction (RHEED).